Origin of emission energy blue shift in a 1.3 /spl mu/m GaAsSb type-II quantum well

Summary form only given. Vertical-cavity surface-emitting laser (VCSEL) gain structures that can be epitaxially grown on GaAs substrates are of particular interest. One such system is the type-II GaAsSb/GaInAs/GaAs quantum well structure. For this gain structure, experiments found significant increase in the optical emission peak energy with increasing excitation. This blue shift is a serious concern because it is detrimental to long wavelength operation.This paper describes experimental and theoretical investigations of the significant blue shift of the emission peak with increasing injection current in a type-II quantum well. We find the blue shift to depend on the interplay of the competing effects of type-II quantum confinement, and the resulting Coulomb attraction and band distortion.