High sensitivity, low voltage silicon photodetectors compatible with silicon integration

Summary form only given. The work reports a new high responsivity high sensitivity, high frequency and low voltage photodetector capable of operating at 850 nm and lower wavelengths at multi-GHz frequencies, while providing compatibility with silicon system-on-chip technology. By decoupling the carrier generation process from the carrier collection process, silicon can provide performance characteristics that are either comparable of superior to that achieved from III-V semiconductors. This decoupling is achieved using deep-trench technology based lateral p/sup ++/-polysilicon doped and n/sup ++/-doped junctions that allow for short carrier collection distances while allowing for large absorption depths. Use of poly-silicon-based junctions in silicon allows for low darkcurrent and nearly ideal diodes. Small junction separations and low doping allow low bias and efficient separation of carriers.