Active wave interaction in a distributed semiconductor structure

The advances in developing modern microwave devices are associated with the design of functional systems implementing a variety of wave phenomena (both at the surface and in the bulk) occurring in semiconductor structures, especially taking into account progress in modern precision technologies. A large number of papers deal with the problems of manufacturing active devices based on the long-range (prolonged) interaction of drifting charge carriers in. semiconductors with fields generated by structures. We consider the electron-wave interactions in the distributed semiconductor structure. The key element of the electrodynamic model of the system under study is a semiconductor film. The semiconductor is subjected to applied longitudinal electric and magnetic fields. The system is in the nonequilibrium state; therefore, the disturbances of the space charge arising in the semiconductor propagate in the form of electrokinetic waves, which, in turn, are transformed into electromagnetic radiation.