A study of a solar cell with an implanted defect layer

This work presents a theoretical calculation of the potential barrier due to a low-high interface for low doping, enabling evaluation of the degradation of irradiated Si solar cells. The effects of the radiation environment are taken into account as a reduction of doping level and carrier lifetime. Afterwards the theoretical results are compared with those obtained by simulation. The expressions found can be used to calculate the carrier concentration in each region (n and p) of an n-p junction. But the main feature lies in modelling a defect layer implanted in the bulk of an n-p junction. Results of majority carrier density, minority carrier density, and the low-high barrier height between the defect layer (DL) and the p region base, are shown for different doping values of DL.