Quantum MMIC: future and applications in RF circuits

A new technology namely Quantum-MMIC (QMMIC) is presented. This technology uses the unique property of negative differential resistance (NDR) present in tunneling diodes. Tunnel diodes have shown great potential for power generation at high frequencies. In our case, heterostructure interband tunnel diodes (HITDs) are integrated with heterostructure FETs (HFETs) to produce a 3-terminal device (HITFET) with highly nonlinear current-voltage characteristics. The HITFET can potentially replace one or more conventional FETs and reduce the number of passive elements. Therefore, the HITFET allows the design of new and improved MMICs with reduced complexity and size. Several digital circuits have been demonstrated and many microwave ICs have been proposed. In this paper we will present data showing integrated QMMIC-VCOs and QMMIC-amplifier results. We also present the data for highly integrated QMMIC circuits such as mixers and receivers.