All-epitaxial orientation-patterned GaAs for nonlinear optical frequency conversion

We have demonstrated all-epitaxial growth of orientation patterned GaAs films having suitable aperture and domain period for bulk-focused frequency conversion from the near-IR to mid-IR. The films have good optical properties and enable quasi-phasematched frequency conversion with near theoretical efficiency. Investigation continues into the growth of thicker films, shorter domain periods for use with shorter wavelength pump lasers, and demonstration of mid-IR frequency conversion devices.