Comparison of different oxide growth processes by the thermal step method

Space charge density and location within oxide layer of MOS device are still an important problem since these charges play an significant role in MOS reliability. The Thermal Step Method (TSM) is presented as a very low cost and technically effective test to locate space charge. This work is devoted to TSM validation for oxide thickness range used in microelectronics for passivation process. MOS capacitors with or without RCA cleaning are studied by TSM and high-frequency C-V measurements. RCA treatment induces more space charge at the interfaces between silicon and oxide. Electron trapping during electrical stress is demonstrated by TSM.