Reproducible high field effect mobility polysilicon thin film transistors involving pulsed Nd:YVO/sub 4/ laser crystallization

We fabricated low temperature TFTs on low-cost glass substrates for large area electronic applications. A newly developed crystallization method uses a pulsed diode pumped Nd:YVO/sub 4/ laser. The high repetition capability of up to 100 kHz of this laser results in high throughput rates associated with a scanning speed of up to 5 cm/s. One of the remarkable features-of the TFTs is a field effect mobility mean value of 350 cm/sup 2//Vs with a standard deviation of 5%.