1.3 /spl mu/m InGaAs/GaPAsSb light emitting diode grown on GaAs

Summary form only given. We demonstrate light emitting diodes operating at 1.3 /spl mu/m, based on a novel type-II InGaAs/GaPAsSb quantum well (QW) structure. Photoluminescence has also been achieved at wavelengths up to 1.5 /spl mu/m in samples with different compositions of the GaPAsSb layer. Theoretical modeling using a two-band envelope function approximation has shown that such long wavelength emission results from a spatially indirect transition in the type-II QWs in which the electron and hole wave functions have a strong spatial overlap.