Continuous wave operation of low confinement asymmetric structure diode lasers

Summary form only given. High optical power from diode lasers can be obtained using low confinement structures. An asymmetric design makes this requirement easier and avoids the limitations related to the confinement layers thickness. Results of CW measurements on diode lasers having a new low loss, low confinement InGaAs/AlGaAs DQW asymmetric structure with "optical trap layer", grown by MOVPE are presented.