Effect of proton implantation on optically excited terahertz radiation from GaAs

Summary form only given. Optically excited THz radiation from unbiased semiconductor has been employed as an alternative technique for characterizing the surface properties of damaged semiconductors. In this work, we report the optically excited THz radiation from proton-bombarded GaAs (GaAs:H/sup +/). The different time-resolved THz fields radiating from GaAs:H/sup +/ and semi-insulating GaAs associated with their correlated mechanisms were primarily compared and elucidated.