Ultrafast dynamics in InAs/GaAs quantum dot amplifiers

Summary form only given. Semiconductor lasers with an active medium containing zero-dimensional structures are expected to show superior performance, like high material gain and low threshold current. In this work we have measured the transmission properties and the carrier dynamics of InAs/GaAs QD amplifiers at room temperature. The samples consist of 3 stacked layers of InAs/InGaAs/GaAs quantum dots.