Structural asymmetry effects in the optical gain of indium gallium nitride quantum wells

Summary form only given. Our study indicates a gain competition process between the piezoelectric and many body effects are responsible for the spectral blue shift as the carrier injection increases. When operated over the transparency regime, it is found the structural asymmetry in a 3.0 nm GaN-InGaN-AlGaN QW results in a 35% enhancement of the TE-polarized optical gain compared with the symmetric InGaN-AlGaN QW case.