Optical emission characteristics of GaAs and GaN structures using low temperature near-field scanning optical spectroscopy

Summary form only given, as follows. In this study, we present the results of optical studies of GaAs- and GaN-related structures using LT-NSOM. The optical properties were investigated over the temperature range of 4 to 300 K by means of photoluminescence (PL), PL excitation, and time-resolved PL spectroscopy using a single excitation source, combined with photo-modulated reflectance (PR) spectroscopy using separate pump and probe sources.