Effect of carrier leakage in Q-switched two-section AlGaAs multiple-quantum-well semiconductor lasers

The numerical model used in this analysis is of the two-section MQW semiconductor lasers employed in a previous work. We shows the schematic diagram of the numerical model. The laser cavity consists of the gain region and the saturable absorber. The gain region is pumped with 200 ps electrical pulses, and the saturable absorber is reversely biased. We find that the reduction of the carrier leakage and the optimization of the cavity length are significantly important for short pulse generation.