InAsP/InAlGaAs lasers for high T/sub 0/ operation

Low-cost long-wavelength lasers operating at high temperatures without cooling systems are required for optical subscriber systems. A quantum-well active layer with a large conduction discontinuity is thought to be effective for improving high-temperature characteristics of long-wavelength lasers. In this paper, we report on gas-source MBE growth conditions, and the fabrication process and lasing properties of these newly developed InAsP/InAlGaAs laser diodes with high-temperature characteristics.