Comparison of spontaneous and stimulated emission from UV-blue photonic materials

We have systematically studied both the spontaneous and stimulated emission (SE) behavior in GaN, InGaN, and AlGaN thin films by means of photoluminescence (PL), PL excitation, time-resolved PL, and optical pumping. All the epilayers were grown by metalorganic chemical vapor deposition (MOCVD). Recombination in the GaN thin films was found to be affected by non-radiative processes in the temperature range of 10 - 300 K.