N-polar GaN/InAlN MIS-HEMT with 400-GHz ƒmax

This paper reports 400-GHz ƒ
max
using a tall-stem T-gate on an N-polar GaN/InAlN MIS-HEMT grown by MOCVD. This is the highest reported ƒ
max
value to date for an N-polar GaN HEMT and is among the highest values for all GaN HEMTs.