Effect of strain on the threshold current of GaInP/AlGaInP quantum well lasers emitting at 633 nm

For the first time the performance of visible lasers operating at 633 nm is reported as function of the amount of applied strain. Varying the strain between /spl delta/a/a = -1 % and /spl delta/a/a = + 1 % two minima in threshold current density have been found and are explained.