Channel guide InGaAs-GaAs-InGaP strained quantum well lasers on P-type GaAs substrate for high power operation

Channel guide lasers are, for the first time, demonstrated with ln/sub 0.18/Ga/sub 0.82/As-GaAs-In/sub 0.49/Ga/sub 0.51/P strained quantum well heterostructure on p-type GaAs substrate (/spl lambda/L= 980nm). The uncoated lasers show CW laser thresholds of 12mA at RT and high output powers of 125mW.