Scintillation properties of Ce doped (Lu,Gd)3(Ga,Al)5O12 single crystal grown by the micro-puling-down method

In this report, the Ce: (Lu,Gd)
3
(Ga,Al)
5
O
12
single crystal were grown by the micro-pulling down (m-PD) method. Luminescence and scintillation properties were measured. The substitution at the Al
3+
sites by Ga
³⁺
and at the Lu
³⁺
sites by Gd
³⁺
in garnet structure has been studied. In these crystals, Ce
³⁺
4f-5d emission is observed with 500–530nm wavelength. Emission peak shifts to shorter wavelength and the decay accelerates with increasing Ga concentration. In the case of Ce: Lu
2
Gd
1
(Ga,Al)
5
O
12
series, Ce: Lu
2
Gd
1
Ga
3
Al
2
O
12
shows highest emission intensity. The light yield of Ce: Lu
2
Gd
1
Ga
3
Al
2
O
12
sample with 3mmϕ×1mm size was around 30,000photon/MeV using calibration from
⁵⁵
Fe direct irradiation peak to APD. Scintillation decay time was around 50ns. Density is theoretically 7.1g/cm
³
.