Multi-functional universal device using a band-engineered vertical structure

A multi-functional universal device based on a vertical channel is demonstrated as a total device solution. Four different operation modes: conventional MOSFET, steep slope FET, multi-faceted volatile memory (1T-DRAM and 1T-SRAM), and non-volatile memory are implemented in a single transistor. The steep slope FET and volatile memory are boosted by a vertically inhomogeneous doped channel for spatial energyband-engineering, and non-volatile memory capable of high performance and reliable operation is obtained via tunneling bandgap-engineering.