A subthreshold surface potential modeling of drain/source edge effect on double gate MOS transistor

An analytical sub-threshold surface potential model for double gate MOSFET (DG-MOSFET) is presented incorporating the edge effects at the source and drain ends. As the gate length of DG MOSFETs is scaled down, the barrier lowering becomes very important. A fitting parameter α is introduced to compensate this effect. The results obtained with this modeled equation are well matched with the results from 2-D numerical simulator TCAD.