Two and three terminal planar InP TEDs

Two and three terminal planar InP TED structures have been fabricated using semi-insulating iron doped InP substrates grown by the liquid encapsulated Czrochalski technique. Two terminal TEDs employed a vapor phase epitaxial n layer grown directly on the substrate. Direct implantation of
²⁹
Si into the substrate to form an extended n type layer was used for three terminal TEDs. Both types of TEDs displayed negative resistance regions in the pulsed I/V characteristics with current dropbacks of between 25% and 35%. The highest observed pulse power output for two terminal TEDs was 1.25 mW at 11.7 GHz. Three terminal TEDs delivered their best pulsed performance at 2.1 GHz with 106 mW and 6% efficiency.