Self-heating of submicrometer InP-InGaAs DHBTs

We studied the thermal properties of submicron InP-InGaAs-InP double heterojunction bipolar transistors (DHBTs) with emitter dimensions of A = 0.25 × 4 μm
²
. From the temperature dependence of V/sub bc/, we measured a thermal resistance of R/sub th/ = 3.3 /spl deg/C/mW for DHBTs with ion-implanted n+-InP subcollector at room temperature, compared to a high R/sub th/ = 7.5 /spl deg/C/mW from DHBTs with conventional grown InGaAs subcollector. Two-dimensional device simulations confirm the measured results.