CdSe/ZzTe heterojunction solar cells grown on GaSb

This paper reports recent experimental work on single junction II-VI semiconductor heterostructure solar cells consisting of n-type CdSe and p-type ZnTe grown by molecular beam epitaxy on GaSb substrates. The structural and crystalline properties are characterized using high-resolution X-ray diffraction measurements. The current-voltage measurements reveal expected diode-like rectifying characteristics with considerable photo current and strong photovoltaic effects under light illumination. These results demonstrate that the idea of using monolithic integration of lattice-matched II-VI and III-V semiconductors on GaSb is very promising for ultra-high efficiency multijunction solar cells.