A New Injection Efficiency Controlled GTO

A new GTO structure called the injection efficiency controlled GTO (IEC-GTO) is proposed, and its anode injection efficiency can be controlled via an additional thin oxide layer located in short anode contact region of short anode GTO(SA-GTO). The operation mechanism is analyzed, and the conducting, blocking and switching characteristics are simulated by MEDICI simulator. The results show that injection efficiency of IEC GTO varies with the anode current, thus it has lower gate trigger current and better switching characteristic, similar the conducting and blocking characteristics than that of the conventional SA-GTO, and hardly increase the complexity of process simultaneity. Lastly, the key structural parameter of IEC-GTO is optimized, and the results show the effective width of anode region of the IEC-GTO is slight smaller than that of SA-GTO