Polarization Engineering of InGaN-Based Nanostructures for Low-Threshold Diode Lasers and High-Efficiency Light Emitting Diodes

Novel InGaN-based active regions with improved momentum matrix element were investigated for achieving improved gain and radiative recombination rate. Staggered InGaN quantum wells (QWs) and type-II InGaN-GaNAs QWs demonstrated improvement in radiative recombination rate and optical gain for green spectral regime, and these active regions have the potential to be implemented for high-efficiency green light emitting diodes and lasers.