Fabry-Perot laser diodes and DFB laser diodes emitting at 2.6μM for absorption spectroscopy

We report on FP and DFB semiconductor lasers based on GaInAsSb/AlGaAsSb quantum wells, grown by molecular beam epitaxy. The devices were processed by wet etching or inductively coupled plasma process. Electron beam lithography was used to deposit a metal Bragg grating on each side of the laser ridge to fabricate DFB lasers. The devices all operate in the continuous wave regime at room temperature with a single frequency emission above 2.6 mum and good tuning properties, making them well adapted to tunable diode laser absorption spectroscopy.