A study of NBTI in HfSiON/TiN p-MOSFETs using ultra-fast on-the-fly (UF-OTF) IDLIN technique

Negative bias temperature instability (NBTI) is studied in HfSiON/TiN p-MOSFETs having thin (2 nm) and thick (3 nm) HfSiON layer on top of 1 nm SiO
₂
interfacial layer. By using ultra fast on the fly IDLIN technique, the impact of stress temperature (T) and oxide field (E
_OX
) on NBTI time evolution is studied. The thickness of the HfSiON layer is shown to have negligible impact on time, T and E
_OX
dependence of NBTI. The impact of time-zero (t
₀
) delay on power law time exponent (n), E
_OX
acceleration (Gamma) of degradation and E
_OX
acceleration (beta) of time to fail (tt
_F
) is also studied. The t
₀
does not impact Gamma but strongly impacts n, beta and hence extracted safe operating voltage (V
_GSAFE
).