Si single-electron memory having in-plane dot with double gates

We fabricated the single-electron memory having double gates. In this device, sharp I
_d
drops were observed. The observed ΔⅤ
_sg
and ΔⅤ
_bg
are expressed by multiples of the quantized voltage shift, and they agreed well with the predicted values due to a single-electron injection into the dot. Therefore, we can conclude that electrons were injected into the dot from the channel one by one. While, we have obtained three times larger g
_m
value by adding a back gate electrode, which resolve the tradeoff between transconductance and gate leakage current in the conventional memory with a single gate. These results will lead to an extremely low power memory.