A novel monolithic pixel detector implemented in high-voltage CMOS technology

Novel concept for monolithic pixelated particle detector with 100 % fill-factor will be presented. The detection is based on the charge drift in the depleted zone of the reverse biased diode. Pixel electronics, which includes amplifier, discriminator, threshold-tune DAC and a digital storage cell, is placed inside the cathode of the sensor (N-well). Two test chips with different pixel matrices and test structures have been fabricated in a 0.35 μm high-voltage CMOS process. The results of the electrical tests and measurements with radioactive sources will be presented.