Assessment of influence of interconnect parasitics on RF Performance of multi-finger SiGe power HBTs

The influence of interconnect parasitics on the RF performance of large-area, multi-finger SiGe power HBTs is assessed. A new modeling approach is used to accurately modeling the interconnect parasitics of power devices and, furthermore, to accurately predicting the overall RF performance of the power devices. The validity of the approach is proved by the excellent agreement between simulations and measurement results obtained on multi-finger SiGe power HBTs of different sizes. It was found that the interconnect parasitics has dominant effects on the smalls-signal characteristics of SiGe power HBTs.