Silicon THz Lasers Performance Under Uniaxial Stress

The experimental results of uniaxial stress study of optically pumped THz silicon lasers are presented. The uniaxial stress leads to the shift of pairs of valleys with respect to each other that, in turn, affects the intervalley scattering and causes changing of the lifetimes of principal states. The experiments carried out have shown considerable (10 times) decrease of pump threshold for Si:P and Si:Sb and change of emission frequency for Si:As and Si:Bi.