Experimental Study of Metallic Emitter SiGeC HBTs

This paper deals with the integration of a metallic emitter in a high-speed SiGe HBT technology. An innovative integration process called PRETCH is detailed, along with static and high-frequency electrical results. Hall Effect measurements down to 20 K on Asdoped mono-emitter layers are also reported, which help understand the physics of hole injection in highly doped emitters. The optimization of the process is detailed, and a significant increase of the fT × BVCEO product in metallic emitter SiGe HBTs is finally demonstrated.