Physics-Based Model of IGBT Including MOS Side Two-Dimensional Effects

An existing physics-based model, which has proven accurate for inductive turn-off and inductive turn-on simulations, is modified to account for lateral-gate IGBT two-dimensional effects at the MOS end of the drift region. The modification is based on a steady-state solution of carrier distribution in the JFET region of the IGBT. The accuracy of this solution is verified through a set of finite-element simulations. The improved accuracy of the modified model in terms of on-state forward drop and voltage tail at turn-on is verified through comparison with experimental results