Electrical and Optical Characteristics of UV Photodetector With Interlaced ZnO Nanowires

A zinc oxide (ZnO) nanowire (NW) photodetector was fabricated with a simple method by bridging the gap of interdigitated gallium-doped ZnO pattern deposited on a silicon oxide (SiO
₂
) thin film with interlaced ZnO NWs. With an incident wavelength of 375 nm, it was found that measured responsivity was 0.055 A/W for the interlaced ZnO NWs photodetector with a 1 V applied bias. The transient time constants measured during the turn-on and turn- off states were τ
_ON
= 12.72 ms and τ
_OFF
= 447.66 ms , respectively. Furthermore, the low-frequency noise spectra obtained from the ultraviolet photodetector were purely due to the 1/
f
noise. Besides, the noise equivalent power and normalized detectivity (
D
^*
) of the ZnO NW photodetector were 2.32 ×10
^-9
W and 7.43 ×10
⁹
cm·Hz
^0.5
·W
^-1
, respectively.