SiGe HBT Without Selectively Implanted Collector (SIC) Exhibiting$f_max = hbox310 hboxGHz$and$hboxBV_rm CEO = hbox2 hboxV$

Device characteristics for SiGe heterojunction bipolar transistors fabricated by a simplified process without selectively implanted collector (SIC), which exhibit peak f
_max
of 310 GHz at the collector-current density of 7 mA/mum
²
and BV
_CEO
of 2 V, are reported. For comparison, the characteristics of devices with various SIC doses are also presented, and the observed trends are discussed