SiGe BiCMOS Technologies for Improving Sensitivity and High-Speed Characteristics of the Communication LSIs

Two important technologies are exploited in the high-speed SiGe BiCMOS fabrications based on the inspection of the device physics. The effective reduction of the base resistance is achieved by optimizing profile and configuration of the SiGe HBT. Moreover, the concept of obtaining a narrow base in the BiCMOS process is established, which enables the ultra-high-speed SiGe BiCMOS