A Compact, Analytical Two-dimensional Threshold Voltage Model for Cylindrical, Fully-depleted, Surrounding-Gate(SG) MOSFETs

Based on two-dimensional(2D) potential analysis, a compact, analytical model for threshold voltage in cylindrical, fully-depleted, surrounding-gate(SG) MOSFETs is derived. The minimum surface potential μ
min,surface
is used to develop the threshold voltage model. Besides decreasing the characteristic factor, both the thin silicon body and gate oxide can reduce the threshold voltage roll-off simultaneously. It is also found that the threshold voltage shift is dependent on the scaling factor of λ
1
L. The high scaling factor is preferred to alleviate threshold voltage degradation.