Threshold Voltage Model of SiGe Channel pMOSFET without Si Cap Layer

An analytical model on the threshold voltage of SiGe-channel pMOSFET without Si cap layer is developed by solving the Poisson's equation. Energy-band offset induced by SiGe strained layer, short-channel effect and drain-induced barrier lowering effect are taken into account in the model. To evaluate the validity of the model, simulated results are compared with experimental data and results from BSIM4, and good agreements are confirmed.