High-power GaN-HEMT devices operating at MM-wave frequencies

This paper summarizes the unique performance capabilities of high-power GaN high electron mobility transistor (HEMT) devices for possible integration in high power solid-state amplifiers capable of operating under severe thermal and mechanical environments. Optimum device parameters, higher bias levels, and higher cutoff frequencies are needed to achieve higher power densities at MM-wave frequencies. High power GaN-HEMTs have potential applications in third-generation mobile communications systems, auto-collision radars, and high power T/R modules used in long range missile defense radars.