GaAs-Based InAs/InGaAs Quantum Dot Vertical Cavity and Vertical External Cavity Surface Emitting Lasers Emitting Near 1300 nm

The first near 1300 nm electrically-injected vertical cavity surface emitting lasers containing sheets of self-assembled InAs/InGaAs quantum dot active regions grown on GaAs substrates that emit over 1 mW continuous wave peak power at room temperature are demonstrated.