Nanoscale selective area epitaxy: towards lithographically defined quantum dots at 1.5 /spl mu/m using direct lithographic patterning

InP/InGaAs/InP heterostructures were selectively grown in an array of 60 nm holes on a 90 nm pitch by MOCVD. The pattern was defined photolithographically directly in hydrogen silsesquioxane, a spin-on-glass, obviating the need for pattern transfer processes.