High performance electrically induced body dynamic threshold SOI MOSFET (EIB-DTMOS) with large body effect and low threshold voltage

A novel Electrically Induced Body DTMOS (EIB-DTMOS) is proposed where the body is electrically induced by the substrate bias and its high performance is demonstrated by experiments and simulations. EIB-DTMOS achieves the large body effect and low V/sub th/ at the same time. Among several DTMOSs, the accumulation mode EIB-DTMOS shows the highest current drive at fixed off-current due to the large V/sub th/ shift and the suppressed short channel effect.