Fabrication of a Novel InAs Multiple Quantum Wire Transistor

InAs/AlGaSb is an attractive heterostructure for high speed as well as quantum effect device applications because of having a strong confinement potential and a small effective mass in comparison with GaAs heterostructures. Low-dimensional electron transport properties in InAs/AlGaSb have been studied for hgh speed and quantum effect device applications [1]-[2]. We have also studied dimensional (1D) electron transport in InAs/AlGaSb single and multiple quantum wires (QWs).