Internal characterization of IGBTs using the backside laser probing technique-interpretation of measurement by numerical simulation

Recently, it has been demonstrated that internal carrier concentration and temperature profiles in semiconductor devices are accessible to accurate measurement by various infrared laser probing techniques (Deboy et al., Microelectronic Eng. vol 31, p. 299, 1996, and Seliger et al., ibid., vol. 31, p. 87, 1996). This work presents an additional technique, namely the time-resolved characterization of IGBTs by backside laser probing. Calibrated numerical device simulation is employed for investigation of the relevance of effects introduced by the sample preparation on the interpretation of the measurement results.