Monolithically integrated DFB-MOPA at 670 nm wavelength

We report on a monolithically integrated DFB master oscillator power amplifier (DFB-MOPA) in the material system GaInP/AlGaInP producing 300 mW of single-lobed power at 673 nm. The DFB-MOPA was realized on a GaInP/AlGaInP single quantum well structure, grown by low-pressure MOVPE. We studied the junction-up mounted DFB-MOPA under long-pulsed operation (20 /spl mu/s/1 % duty-cycle) at 10/spl deg/C to maintain most of the cw-operation characteristics. An L-I curve for three different oscillator currents is shown.