MBE-grown strained AlInGaAs/AlGaAs vertical cavity lasers with low threshold currents and high output power

In conclusion, we demonstrated room temperature CW operation of MBE-grown strained AlInGaAs-AlGaAs top-emitting VCLs. We have obtained a low CW threshold current of 1.3 mA for a 7 /spl mu/m/spl times/7 /spl mu/m device without post-growth annealing. In addition, a high output power of 5.5 mW with 51% differential quantum efficiency was obtained from an 11 /spl mu/m/spl times/11 /spl mu/m device.