Low-temperature near-field spectroscopy of quantum dots

We discuss recent progress on nanoprobing techniques for quantum dots using low-temperature near-field spectroscopy. We present measurements for GaAs quantum dots which are fabricated by the selective epitaxial growth on SiO/sub 2/-patterned GaAs (100) substrates by metal organic chemical vapor deposition. Photoluminescence spectra are reported and carrier diffusion monitoring is carried out by varying the intensity of the excitation light.